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Power Bipolar Transistor
Features：
Application：
IC(A) 25℃
0.18
0.3
0.4
0.8
1
1.2
1.5
2
2.5
3
3.5
4
5
7
8
10
12
BVCEO(min)
200
250
260
400
440
450
480
500
BVCEO(Typ)
250
280
300
450
480
500
520
530
540
BVCBO(Min)
400
500
600
700
800
850
1100
BVCBO(Typ)
500
680
750
780
800
820
840
850
900
950
1200
HFE
10-40
15-30
20-30
20-35
25-35
25-50
60-100
TS
1.0-2.0
1.0-3.0
1.2-1.7
1.4-2.4
1.5-2.5
1.5-3.0
1.7-2.7
1.8-2.6
2.0-3.0
2.0-3.5
2.0-4.0
2.0-4.2
2.0-6.0
2.5-3.5
2.5-4.5
3.0-5.0
3.0-7.0
3.5-4.5
4.0-7.0
4.0-9.0
5.0-7.0
5.2-6.5
6.0-8.0
1.2-2.7
Product Name
IC(A) 25℃
BVCEO(min)
BVCEO(Typ)
BVCBO(Min)
BVCBO(Typ)
HFE
TS
BLD123DT（TO-126&126S&251T&251S&252）
2
450
480
800
820
10-40
2.0-3.0
/
/
/
Download
BLD122DT（TO-92&92S&126&126S&SOT-89）
1.2
450
480
800
820
10-40
1.5-2.5
/
/
/
Download
BLD122DT（TO-251T&251S&252）
1.2
450
480
800
820
10-40
1.5-2.5
/
/
/
Download
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